Urea Sensitive Field Effect Transistors Based on Dithio Group-Containing Langmuir–Blodgett Membranes
نویسندگان
چکیده
منابع مشابه
fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
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ژورنال
عنوان ژورنال: Bulletin of the Chemical Society of Japan
سال: 1991
ISSN: 0009-2673,1348-0634
DOI: 10.1246/bcsj.64.2019